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BCR08AS-12
Triac
Low Power Use
REJ03G0292-0200 Rev.2.00 Mar 22, 2007
Features
* * * * IT (RMS) : 0.8 A VDRM : 600 V IFGTI, IRGTI, IRGT : 5 mA IFGT : 10 mA * Non-Insulated Type * Planar Passivation Type * Completed Pb Free
Outline
RENESAS Package code: PLZZ0004CA-A (Package name: UPAK)
1 2 3
RENESAS Package code: PLZZ0004CB-A LZZ0004 Z (Package name: SOT-89) )
2, 4 4 1 2 3 1 1. 2. 3. 4. T1 Terminal T2 Terminal Gate Terminal T2 Terminal
4
3
Applications
Hybrid IC, solid state relay, electric fan, washing machine, and other general purpose control applications
Maximum Ratings
Parameter Repetitive peak off-state voltageNote1 Non-repetitive peak off-state voltageNote1 Parameter RMS on-state current Surge on-state current I2t for fusing Peak gate power dissipation Average gate power dissipation Peak gate voltage Peak gate current Junction temperature Storage temperature Mass Notes: 1. Gate open. Symbol IT (RMS) ITSM I2 t PGM PG (AV) VGM IGM Tj Tstg -- Symbol VDRM VDSM Ratings 0.8 8 0.26 1 0.1 10 1 - 40 to +125 - 40 to +125 50 Unit A A A2s W W V A C C mg Typical value Voltage class 12 (Mark BF) 600 720 Conditions Commercial frequency, sine full wave Note3 360 conduction, Ta = 40C 60Hz sinewave 1 full cycle, peak value, non-repetitive Value corresponding to 1 cycle of half wave 60Hz, surge on-state current Unit V V
REJ03G0292-0200 Rev.2.00 Mar 22, 2007 Page 1 of 7
BCR08AS-12
Electrical Characteristics
Parameter Repetitive peak off-state current On-state voltage Gate trigger voltageNote2 V V Symbol IDRM VTM VFGT VRGT VRGT VFGT IFGT IRGT IRGT IFGT VGD Rth (j-a) (dv/dt)c Min. -- -- -- -- -- -- -- -- -- -- 0.1 -- 0.5 Typ. -- -- -- -- -- -- -- -- -- -- -- -- -- Max. 2.0 2.0 2.0 2.0 2.0 2.0 5 5 5 10 -- 65 -- Unit mA V V V V V mA mA mA mA V C/W V/s Test conditions Tj = 125C, VDRM applied Tc = 25C, ITM = 1.2 A, Instantaneous measurement Tj = 25C, VD = 6 V, RL = 6 , RG = 330
Gate trigger currentNote2
Tj = 25C, VD = 6 V, RL = 6 , RG = 330
Gate non-trigger voltage Thermal resistance Critical-rate of rise of off-state Note4 commutating voltage
Tj = 125C, VD = 1/2 VDRM Junction to ambientNote3 Tj = 125C
Notes: 2. Measurement using the gate trigger characteristics measurement circuit. 3. Soldering with ceramic plate (25 mm x 25 mm x t0.7 mm). 4. Test conditions of the critical-rate of rise of off-state commutating voltage is shown in the table below. Commutating voltage and current waveforms (inductive load)
Supply Voltage
Time (di/dt)c Time Time VD
Test conditions 1. Junction temperature Tj = 125C 2. Rate of decay of on-state commutating current (di/dt)c = - 0.4 A/ms 3. Peak off-state voltage VD = 400 V
Main Current Main Voltage (dv/dt)c
REJ03G0292-0200 Rev.2.00 Mar 22, 2007 Page 2 of 7
BCR08AS-12
Performance Curves
Maximum On-State Characteristics
101 7 5 4 3 2 100 7 5 4 3 2 10-1 0 1 2 10
Rated Surge On-State Current
Surge On-State Current (A)
On-State Current (A)
8
Tj = 125C
6
4
Tj = 25C
2 0 100
3
4
5
2 3 4 5 7 101
2 3 4 5 7 102
On-State Voltage (V)
Conduction Time (Cycles at 60Hz)
Gate Trigger Current (Tj = tC) x 100 (%) Gate Trigger Current (Tj = 25C)
Gate Characteristics
102 7 5 3 2 101 7 5 3 2 100 7 5 3 2
Gate Trigger Current vs. Junction Temperature
103 7 5 4 3 2 102 7 5 4 3 2 101 -60 -40 -20 0 20 40 60 80 100 120 140
Typical Example IFGT III IFGT I, IRGT III, IRGT I
Gate Voltage (V)
VGM = 10V PGM = 1W PG(AV) = 0.1W
VGT
IFGT I, IRGT I, IRGT III
IGM = 1A
IFGT III VGD = 0.2V 10-1 100 2 3 5 7 101 2 3 5 7 102 2 3 5 7 103
Gate Current (mA)
Junction Temperature (C)
Gate Trigger Voltage (Tj = tC) x 100 (%) Gate Trigger Voltage (Tj = 25C)
Gate Trigger Voltage vs. Junction Temperature
103 7 5 4 3 2 102 7 5 4 3 2
Maximum Transient Thermal Impedance Characteristics (Junction to ambient)
Transient Thermal Impedance (C/W)
102 2 3 5 7 103 2 3 5 7 104 2 3 5 7 105 103 7 * 25mmx25mmxt0.7mm 5 Ceramic plate 3 2 102 7 5 3 2 101 7 5 3 2 100 10-1 2 3 5 7 100 2 3 5 7 101 2 3 5 7 102
Typical Example
VFGT I VFGT III
Junction to ambient *
VRGT I VRGT III
101 -60 -40 -20 0 20 40 60 80 100 120 140
Junction Temperature (C)
Conduction Time (Cycles at 60Hz)
REJ03G0292-0200 Rev.2.00 Mar 22, 2007 Page 3 of 7
BCR08AS-12
Allowable Ambient Temperature vs. RMS On-State Current
25mmx25mmxt0.7mm 140 Ceramic plate
120 100 80 60 40 20 0 0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 160
Maximum On-State Power Dissipation
2.0
On-State Power Dissipation (W)
1.6
Ambient Temperature (C)
1.2
Curves apply regardless of conduction angle Resistive, inductive loads Natural convection
0.8
0.4
360 Conduction Resistive, inductive loads
0 0.4 0.8 1.2 1.6 2.0
0
RMS On-State Current (A)
RMS On-State Current (A)
Repetitive Peak Off-State Current (Tj = tC) x 100 (%) Repetitive Peak Off-State Current (Tj = 25C)
Repetitive Peak Off-State Current vs. Junction Temperature
Holding Current vs. Junction Temperature
Holding Current (Tj = tC) x 100 (%) Holding Current (Tj = 25C)
105 7 Typical Example 5 3 2 104 7 5 3 2 103 7 5 3 2 102 -60 -40 -20 0 20 40 60 80 100 120 140
103 7 5 3 2 102 7 5 3 2
Typical Example
101 -60 -40 -20 0 20 40 60 80 100 120 140
Junction Temperature (C)
Junction Temperature (C)
Latching Current vs. Junction Temperature
102 7 5 3 2 101 7 5 3 2 100 7 5 3 T2+, G+ 2 T2-, G- Typical Example T2-, G+ 10-1 0 40 80 -40
Breakover Voltage vs. Junction Temperature
Breakover Voltage (Tj = tC) x 100 (%) Breakover Voltage (Tj = 25C)
160 140 120 100 80 60 40 20
Distribution T2+, G- Typical Example
Typical Example
Latching Current (mA)
120
160
0 -60 -40 -20 0 20 40 60 80 100120 140
Junction Temperature (C)
Junction Temperature (C)
REJ03G0292-0200 Rev.2.00 Mar 22, 2007 Page 4 of 7
BCR08AS-12
Breakover Voltage vs. Rate of Rise of Off-State Voltage
160 101
Breakover Voltage (dv/dt = xV/s) x 100 (%) Breakover Voltage (dv/dt = 1V/s)
Commutation Characteristics
Critical Rate of Rise of Off-State Commutating Voltage (V/s)
7 5 3 2 100 7 5 3 Characteristics 2 Value 10-1 10-1 2 3
Minimum
140 120
Typical Example Tj = 125C
I Quadrant
100 80 60 40 20 0 100 2 3 5 7 101 2 3 5 7 102 2 3 5 7 103
Typical Example Tj = 125C IT = 1A = 500s VD = 200V
III Quadrant
III Quadrant
I Quadrant
5 7 100
2
3
5 7 101
Rate of Rise of Off-State Voltage (V/s)
Rate of Decay of On-State Commutating Current (A/ms)
Gate Trigger Current vs. Gate Current Pulse Width
Gate Trigger Current (tw) x 100 (%) Gate Trigger Current (DC)
103 7 5 4 3 2 102 7 IRGT I IRGT III IFGT I 5 IFGT III 4 3 2 101 0 10 2 3 4 5 7 101 2 3 4 5 7 102
Gate Trigger Characteristics Test Circuits
6 6
Typical Example
6V V
A 330
6V V
A 330
Test Procedure I 6
Test Procedure II 6
6V V
A 330
6V V
A 330
Gate Current Pulse Width (s)
Test Procedure III
Test Procedure IV
REJ03G0292-0200 Rev.2.00 Mar 22, 2007 Page 5 of 7
BCR08AS-12
Package Dimensions
Package Name UPAK JEITA Package Code SC-62 RENESAS Code PLZZ0004CA-A Previous Code UPAK / UPAKV MASS[Typ.] 0.050g
Unit: mm
4.5 0.1
1.5 1.5 3.0
JEITA Package Code SC-62
RENESAS Code PLZZ0004CB-A
Package Name SOT-89
0.8 Min
0.44 Max
MASS[Typ.] 0.48g
(0.4)
0.53 Max 0.48 Max
(2.5)
1
2.5 0.1 4.25 Max
0.4
1.8 Max
1.5 0.1 0.44 Max
(1.5)
(0.2)
Unit: mm
4.6Max 1.6 0.2 1.5 0.1 0
2.5 0 0.1 0.8M 0.8Min
0.58Max 3.0 0.48Max
4.2Max Max
1.5
0.4 -0.05
+0.03
REJ03G0292-0200 Rev.2.00 Mar 22, 2007 Page 6 of 7
BCR08AS-12
Order Code
Lead form Surface-mounted type Standard packing Taping Quantity 4000 Standard order code Type name +A -T +Direction (1 or 2)+4 Standard order code example BCR08AS-12A-T14
Note : Please confirm the specification about the shipping in detail.
REJ03G0292-0200 Rev.2.00 Mar 22, 2007 Page 7 of 7
Sales Strategic Planning Div.
Nippon Bldg., 2-6-2, Ohte-machi, Chiyoda-ku, Tokyo 100-0004, Japan
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